GL4 HE & GL8 HE & GL12 HE series nanoimprint lithography equipment combines UV-NIL and thermal-NIL (Hot Embossing - HE) functions, UV-NIL and thermal-NIL processes can be carried out separately or in-situ simultaneously. It enables semi-automatic imprinting of high resolution (better than 10nm *) and high aspect ratio (better than 10 : 1 *) nanostructures on up to 100mm/200mm/300mm wafers.
The equipment supports using rigid or flexible molds. Working stamps, which have high resolution and long service life, with a wide range of material selection can be replicated inside the machine. Using working stamps can significantly reduce the cost of large-area molds in nanoimprint processes. The use of uniform gas pressure ensures large-area imprinting uniformity and replication fidelity. GL4 HE & GL8 HE & GL12 HE are suitable for R&D or small volume production of DOE, AR / VR waveguide (including slanted gratings), WGP, metalens, biochip, LED PSS, MLA and other applications.
Full-field nanoimprint equipment combines UV-NIL and thermal-NIL functions, for replication of high-resolution, high aspect ratio nanostructures on up to 100mm/200mm/300mm wafers.
UV- and thermal-NIL processes can be carried out separately or in-situ in one imprint sequence simultaneously.
Uniform gas pressure up to 50/80bar ensures large-area imprint uniformity and replication fidelity.
Working stamp replication in the equipment, reducing the cost of large-area molds in nanoimprint processes.
High power UV LED panel light source (365nm, light intensity >1000mW/cm2), possible customization of power and wavelength of the light source, perfectly support a variety of commercial nanoimprint materials.
Mini-environment as standard.
A set of nanoimprint processes and materials starter-kit will be delivered together with the machine, to enable our customers beginning with world leading level of nanoimprint technology based on our experiences.
Substrate size |
≤300x300mm (GL12 HE) ≤200×200mm（GL8 HE） ≤100x100mm (GL4 HE) |
Mold size |
≤300x300mm (GL12 HE) ≤200×200mm（GL8 HE） ≤100x100mm (GL4 HE) |
Supported NIL process |
UV-NIL function Thermal-NIL (Hot embossing - HE) function Simultaneous UV-NIL & thermal-NIL in-situ in one imprint sequence |
Wafer loading & unloading |
Manual loading and unloading |
Pressure application method |
Uniform gas pressure guarantees large-area imprint uniformity |
Imprint pressure |
≤50bar (GL12 HE) ≤50bar (GL8 HE, 80bar customized) ≤80bar (GL4 HE) |
Imprint Temperature |
RT ~ 250℃, setting accuracy ±1℃ |
Resolution |
Better than 10nm* |
Aspect ratio |
Better than 10:1* |
Residual layer thickness（RLT） |
Less than 10nm* |
UV curing light source |
High power UV LED panel light source (365nm）, Exposure area≥300×300mm（GL12 HE）/ ≥200×200mm（GL8 HE）/ ≥100×100mm（GL4 HE） light intensity >1000mW/cm2 (2000mw/cm2 optional) Exposure uniformity better than 90%* |
Mini-environment and climate control |
Standard, external environment class 100, internal environment better than class10* |
Automatic imprinting |
Supported |
Automatic working stamp replication |
Supported |
Automatic alignment |
Optional (accuracy greater than ±1um*) |